|Commenced in January 2007||Frequency: Monthly||Edition: International||Paper Count: 8|
According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.
These days, the field of tissue engineering is getting serious attention due to its usefulness. Bone tissue engineering helps to address and sort-out the critical sized and non-healing orthopedic problems by the creation of manmade bone tissue. We will design and validate an efficient numerical model, which will simulate the effective diffusivity in bone tissue engineering. Our numerical model will be based on the finite element analysis of the diffusion-reaction equations. It will have the ability to optimize the diffusivity, even at multi-scale, with the variation of time. It will also have a special feature “parametric sweep”, with which we will be able to predict the oxygen, glucose and cell density dynamics, more accurately. We will fix these problems by modifying the governing equations, by selecting appropriate spatio-temporal finite element schemes and by transient analysis.
Electromagnetic forces on three-phase five-wire (3P5W) busbar system is investigated under three-phase short-circuits current. The conductor busbar placed in compact galvanized steel enclosure is in the rectangular shape. Transient analysis from Opera-2D is carried out to develop the model of three-phase short-circuits current in the system. The result of the simulation is compared with the calculation result, which is obtained by applying the theories of Biot Savart’s law and Laplace equation. Under this analytical approach, the moment of peak short-circuit current is taken into account. The effect upon geometrical arrangement of the conductor and the present of the steel enclosure are considered by the theory of image. The result depict that the electromagnetic force due to the transient short-circuit from simulation is agreed with the calculation.
The transient analysis of a queuing system with fixed-size batch Poisson arrivals and a single server with exponential service times is presented. The focus of the paper is on the use of the functions that arise in the analysis of the transient behaviour of the queuing system. These functions are shown to be a generalization of the modified Bessel functions of the first kind, with the batch size B as the generalizing parameter. Results for the case of single-packet arrivals are obtained first. The similarities between the two families of functions are then used to obtain results for the general case of batch arrival queue with a batch size larger than one.