Open Science Research Excellence

Arnab Majumdar

Publications

2

Publications

2
10004711
Improvement in Properties of Ni-Cr-Mo-V Steel through Process Control
Abstract:
Although gun barrel steels are an important variety from defense view point, available literatures are very limited. In the present work, an IF grade Ni-Cr-Mo-V high strength low alloy steel is produced in Electric Earth Furnace-ESR Route. Ingot was hot forged to desired dimension with a reduction ratio of 70-75% followed by homogenization, hardening and tempering treatment. Sample chemistry, NMIR, macro and micro structural analyses were done. Mechanical properties which include tensile, impact, and fracture toughness were studied. Ultrasonic testing was done to identify internal flaws. The existing high strength low alloy Ni-Cr-Mo-V steel shows improved properties in modified processing route and heat treatment schedule in comparison to properties noted earlier for manufacturing of gun barrels. The improvement in properties seems to withstand higher explosive loads with the same amount of steel in gun barrel application.
Keywords:
Gun barrel steels, IF grade, physical properties, thermal and mechanical processing, mechanical properties, ultrasonic testing.
1
10004823
A Comparative Study on Optimized Bias Current Density Performance of Cubic ZnB-GaN with Hexagonal 4H-SiC Based Impatts
Abstract:

In this paper, a vivid simulated study has been made on 35 GHz Ka-band window frequency in order to judge and compare the DC and high frequency properties of cubic ZnB-GaN with the existing hexagonal 4H-SiC. A flat profile p+pnn+ DDR structure of impatt is chosen and is optimized at a particular bias current density with respect to efficiency and output power taking into consideration the effect of mobile space charge also. The simulated results obtained reveals the strong potentiality of impatts based on both cubic ZnB-GaN and hexagonal 4H-SiC. The DC-to-millimeter wave conversion efficiency for cubic ZnB-GaN impatt obtained is 50% with an estimated output power of 2.83 W at an optimized bias current density of 2.5×108 A/m2. The conversion efficiency and estimated output power in case of hexagonal 4H-SiC impatt obtained is 22.34% and 40 W respectively at an optimum bias current density of 0.06×108 A/m2.

Keywords:
Cubic ZnB-GaN, hexagonal 4H-SiC, Double drift impatt diode, millimeter wave, optimized bias current density, wide band gap semiconductor.