Effects of Double Delta Doping on Millimeter and Sub-millimeter Wave Response of Two-Dimensional Hot Electrons in GaAs Nanostructures
Carrier mobility has become the most important
characteristic of high speed low dimensional devices. Due to
development of very fast switching semiconductor devices, speed of
computer and communication equipment has been increasing day by
day and will continue to do so in future. As the response of any
device depends on the carrier motion within the devices, extensive
studies of carrier mobility in the devices has been established
essential for the growth in the field of low dimensional devices.
Small-signal ac transport of degenerate two-dimensional hot
electrons in GaAs quantum wells is studied here incorporating
deformation potential acoustic, polar optic and ionized impurity
scattering in the framework of heated drifted Fermi-Dirac carrier
distribution. Delta doping is considered in the calculations to
investigate the effects of double delta doping on millimeter and submillimeter
wave response of two dimensional hot electrons in GaAs
nanostructures. The inclusion of delta doping is found to enhance
considerably the two dimensional electron density which in turn
improves the carrier mobility (both ac and dc) values in the GaAs
quantum wells thereby providing scope of getting higher speed
devices in future.
Carrier mobility, Delta doping, Hot carriers,Quantum wells.